TK22E10N1 N-Channel Silicon MOSFET

TK22E10N1 N-Channel Silicon MOSFET

Rs. 82.39
Sale price  Rs. 82.39 Regular price 
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TK22E10N1 N-Channel Silicon MOSFET

TK22E10N1 N-Channel Silicon MOSFET

Rs. 82.39
Regular price  Sale price  Rs. 82.39
Shipping calculated at checkout.

Enhancement Mode Power MOSFET – Low RDS(on) High-Efficiency Switching Device
This high-performance enhancement-mode Power MOSFET is designed for efficient switching, load control, and power management applications. Featuring an ultra-low drain-source on-resistance of 11.5mΩ (typical) at VGS = 10V, the MOSFET delivers reduced conduction losses and improved system efficiency. Its low leakage current and reliable threshold voltage characteristics make it suitable for embedded systems, industrial electronics, motor control circuits, and high-efficiency power applications.

Why it’s a System Essential:
• Ultra-Low On-Resistance: RDS(on) of 11.5mΩ minimizes heat generation and improves power efficiency.
• Low Leakage Current: IDSS of only 10μA (max) ensures reduced standby power loss.
• Enhancement Mode Operation: Gate threshold voltage range of 2.0V to 4.0V enables reliable switching control.
• Efficient High-Speed Switching: Suitable for PWM, SMPS, and motor control applications.
• Reliable Electrical Performance: Designed for stable operation in demanding electronic systems.
• Suitable for Embedded Power Systems: Ideal for automation, robotics, and battery-powered applications.
• Easy Integration: Compatible with MOSFET drivers, microcontrollers, and power control circuits.

Technical Capabilities:
• Device Type: Enhancement Mode Power MOSFET
• Drain-Source On-Resistance (RDS(on)): 11.5mΩ (typ.) @ VGS = 10V
• Leakage Current (IDSS): 10μA (max) @ VDS = 100V
• Gate Threshold Voltage (Vth): 2.0V to 4.0V
 • Test Conditions: VDS = 10V, ID = 0.3mA
• Function: Power switching, load control, and motor driving

Features:
• Low conduction losses
• Low standby leakage current
• Efficient switching performance
• Reliable enhancement-mode operation
• Suitable for high-efficiency power electronics

Applications:
• Switching power supplies (SMPS)
• Motor driver circuits
• DC-DC converters
• Battery management systems
• PWM switching applications
• Industrial automation systems
• Robotics and embedded systems
• Automotive electronics
• DIY power electronics projects

Best For:
Ideal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, automation systems, robotics, embedded systems, motor controllers, battery-powered devices, and high-efficiency switching applications requiring reliable low-loss MOSFET performance.

Specifications

Drain-Source On Resistance (RDS(on)): 11.5 mΩ (typ.) @ VGS = 10V
Leakage Current (IDSS): 10 µA (max) @ VDS = 100V
MOSFET Mode: Enhancement mode
Threshold Voltage (Vth): 2.0V to 4.0V
(Measured at VDS = 10V, ID = 0.3 mA)

Shipping & Returns

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We are committed to ensuring a positive shopping experience for all our customers. If for any reason you wish to return an item, we invite you to reach out to our team for assistance, and we will evaluate every return request with care and consideration.

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