IRFZ24N MOSFET

IRFZ24N MOSFET

Rs. 37.45
Sale price  Rs. 37.45 Regular price 
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IRFZ24N MOSFET

IRFZ24N MOSFET

Rs. 37.45
Regular price  Sale price  Rs. 37.45
Shipping calculated at checkout.

N-Channel Power MOSFET – 55V TO-220AB High-Speed Switching Device
This N-Channel Power MOSFET is a high-performance switching transistor designed for efficient power control, motor driving, and load management applications. With a Drain-to-Source Breakdown Voltage of 55V and continuous drain current capability of 17A, this MOSFET is suitable for medium-power switching circuits, DC motor control, battery systems, and embedded electronics. Its low total gate charge of 13.3nC enables efficient high-speed switching with reduced gate drive requirements, while the TO-220AB package ensures effective heat dissipation and easy mounting.

Why it’s a System Essential:
• Efficient N-Channel MOSFET Design: Ideal for power switching and load control applications.
• 55V Drain-Source Voltage Rating: Suitable for medium-voltage electronic systems and power circuits.
• High Current Handling: Supports continuous drain current up to 17A.
• Low Gate Charge: Total gate charge of 13.3nC improves switching efficiency and reduces drive complexity.
• Reliable Thermal Performance: Power dissipation capability up to 45W.
• Wide Gate Voltage Support: Gate-Source Voltage rating of ±20V ensures stable gate control.
• TO-220AB Package: Provides effective heat management and easy PCB/heatsink integration.

Technical Capabilities:
• Device Type: N-Channel Power MOSFET
• Package Type: TO-220AB
• Drain-to-Source Breakdown Voltage (VDS): 55V
• Gate-to-Source Voltage (VGS max): ±20V
• Drain-Source On-State Resistance (RDS(on) max): 70mΩ
• Continuous Drain Current (ID): 17A
• Total Gate Charge (Qg): 13.3nC
• Power Dissipation (PD): 45W
• Function: Power switching, load control, and motor driving

Features:
• Fast switching performance
• Low gate drive requirement
• Reliable thermal handling
• High-current switching capability
• Rugged TO-220AB package

Applications:
• DC motor driver circuits
• Switching power supplies (SMPS)
• DC-DC converters
• Battery management systems
• LED power control
• PWM switching applications
• Robotics and automation systems
• Industrial electronics
• DIY power electronics projects

Best For:
Ideal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, automation projects, robotics, motor controllers, SMPS circuits, and medium-power switching applications requiring efficient and reliable MOSFET performance.

Specifications

Transistor Type: N-channel MOSFET
Drain-to-Source Breakdown Voltage (VDS): 55V
Maximum Gate-to-Source Voltage (VGS): ±20V
Drain-Source On-State Resistance (RDS(on)): 70 mΩ (max)
Continuous Drain Current (ID): 17A
Total Gate Charge (Qg): 13.3 nC
Power Dissipation (PD): 45W
Package Type: TO-220AB

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