IRF530N Power MOSFET

IRF530N Power MOSFET

Rs. 37.45
Sale price  Rs. 37.45 Regular price 
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IRF530N Power MOSFET

IRF530N Power MOSFET

Rs. 37.45
Regular price  Sale price  Rs. 37.45
Shipping calculated at checkout.

Power MOSFET – 100V High-Efficiency N-Channel Switching Device
This high-performance N-Channel Power MOSFET is designed for efficient power switching, motor control, and high-current electronic applications. With a Drain-to-Source Voltage (VDS) rating of 100V and low RDS(on) of 44mΩ at a Gate-Source Voltage of 10V, the MOSFET delivers excellent switching efficiency with reduced conduction losses. Its high power dissipation capability of 130W at 25°C makes it suitable for demanding power electronics, industrial automation, and embedded system applications.

Why it’s a System Essential:
• High Voltage Support: Handles up to 100V Drain-to-Source Voltage for versatile power applications.
• Low On-Resistance: RDS(on) of 44mΩ minimizes heat generation and improves efficiency.
• High Power Dissipation: Supports up to 130W power dissipation at 25°C for demanding circuits.
• Wide Gate Voltage Range: Gate-to-Source Voltage rating of ±20V enables reliable gate control.
• Efficient Power Switching: Suitable for high-speed PWM and switching applications.
• Rugged Performance: Ideal for industrial, automotive, and embedded electronics systems.
• Easy Integration: Commonly used with MOSFET drivers, microcontrollers, and power control circuits.

Technical Capabilities:
• Device Type: N-Channel Power MOSFET
• Drain-to-Source Voltage (VDS): 100V
• Gate-to-Source Voltage (VGS): ±20V
• On-Resistance (RDS(on)): 44mΩ at VGS = 10V
• Power Dissipation (PD): 130W at 25°C
• Function: Power switching, load control, and motor driving

Features:
• Low conduction losses
• High switching efficiency
• High power handling capability
• Reliable thermal performance
• Suitable for high-current applications

Applications:
• Motor driver circuits
• DC-DC converters
• Switching power supplies (SMPS)
• Battery management systems
• LED power control
• PWM switching applications
• Industrial automation systems
• Robotics and embedded systems
• DIY power electronics projects

Best For:
Ideal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, automation systems, robotics, motor control circuits, SMPS designs, and high-current switching applications requiring efficient and reliable MOSFET performance.

Specifications

Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±20V
Drain-Source On Resistance (RDS(on)): 44 mΩ @ VGS = 10V
Power Dissipation (PD): 130W @ 25°C

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