{"product_id":"ncep028n85d-85v-200a-n-channel-enhancement-mode-power-mosfet","title":"NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e40V N-Channel Power MOSFET – Ultra-Low RDS(on) High-Current Switching MOSFET\u003c\/strong\u003e\u003cbr\u003eThis high-efficiency N-Channel Power MOSFET is engineered for demanding power switching, motor control, and load-driving applications. With a Drain-Source Voltage (VDS) rating of 40V and a continuous drain current capability of 80A at 25°C, this MOSFET delivers outstanding performance for high-current electronic systems. Its ultra-low RDS(on) of 6.6mΩ at VGS = 10V minimizes conduction losses and improves efficiency, while fast switching performance with low gate charge enables reliable operation in high-frequency power applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Current Capability: Supports continuous drain current up to 80A for heavy-load applications.\u003cbr\u003e• Ultra-Low On-Resistance: RDS(on) of 6.6mΩ reduces power losses and heat generation.\u003cbr\u003e• Fast Switching Operation: Low gate charge enables efficient high-speed switching performance.\u003cbr\u003e• Reliable Voltage Support: Handles up to 40V Drain-Source Voltage for low- and medium-voltage systems.\u003cbr\u003e• Wide Gate Voltage Range: Gate-Source Voltage rating of ±20V supports stable and flexible gate drive control.\u003cbr\u003e• Excellent Thermal Performance: Thermal resistance of 1.88°C\/W improves heat dissipation and reliability.\u003cbr\u003e• High Power Dissipation: Supports up to 80W power dissipation for demanding power electronics applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): 40V\u003cbr\u003e• Continuous Drain Current (ID): 80A at 25°C\u003cbr\u003e• On-Resistance (RDS(on) Max): 6.6mΩ @ VGS = 10V\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Maximum Power Dissipation (PD): 80W\u003cbr\u003e• Thermal Resistance (RθJC): 1.88°C\/W\u003cbr\u003e• Function: Power switching, load control, and motor driving\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Ultra-low conduction losses\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Fast switching response\u003cbr\u003e• Low gate drive requirements\u003cbr\u003e• Excellent thermal reliability\u003cbr\u003e• Suitable for high-efficiency power systems\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Battery management systems\u003cbr\u003e• PWM motor and LED control\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• High-current power switching circuits\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, industrial automation, robotics, battery-powered devices, embedded systems, motor control systems, SMPS designs, and high-current switching applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533917769927,"sku":"TE-MSFT12-481","price":159.43,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/NCEP028N85D85V200AN-ChannelEnhancementModePowerMosfet_1.png?v=1778652558","url":"https:\/\/shop.tinkedge.tech\/products\/ncep028n85d-85v-200a-n-channel-enhancement-mode-power-mosfet","provider":"TinkEdge","version":"1.0","type":"link"}