NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet

NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet

Rs. 159.43
Sale price  Rs. 159.43 Regular price 
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NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet

NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet

Rs. 159.43
Regular price  Sale price  Rs. 159.43
Shipping calculated at checkout.

40V N-Channel Power MOSFET – Ultra-Low RDS(on) High-Current Switching MOSFET
This high-efficiency N-Channel Power MOSFET is engineered for demanding power switching, motor control, and load-driving applications. With a Drain-Source Voltage (VDS) rating of 40V and a continuous drain current capability of 80A at 25°C, this MOSFET delivers outstanding performance for high-current electronic systems. Its ultra-low RDS(on) of 6.6mΩ at VGS = 10V minimizes conduction losses and improves efficiency, while fast switching performance with low gate charge enables reliable operation in high-frequency power applications.

Why it’s a System Essential:
• High Current Capability: Supports continuous drain current up to 80A for heavy-load applications.
• Ultra-Low On-Resistance: RDS(on) of 6.6mΩ reduces power losses and heat generation.
• Fast Switching Operation: Low gate charge enables efficient high-speed switching performance.
• Reliable Voltage Support: Handles up to 40V Drain-Source Voltage for low- and medium-voltage systems.
• Wide Gate Voltage Range: Gate-Source Voltage rating of ±20V supports stable and flexible gate drive control.
• Excellent Thermal Performance: Thermal resistance of 1.88°C/W improves heat dissipation and reliability.
• High Power Dissipation: Supports up to 80W power dissipation for demanding power electronics applications.

Technical Capabilities:
• Device Type: N-Channel Power MOSFET
• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 80A at 25°C
• On-Resistance (RDS(on) Max): 6.6mΩ @ VGS = 10V
• Gate-Source Voltage (VGS): ±20V
• Maximum Power Dissipation (PD): 80W
• Thermal Resistance (RθJC): 1.88°C/W
• Function: Power switching, load control, and motor driving

Features:
• Ultra-low conduction losses
• High-current switching capability
• Fast switching response
• Low gate drive requirements
• Excellent thermal reliability
• Suitable for high-efficiency power systems

Applications:
• Motor driver circuits
• DC-DC converters
• Switching power supplies (SMPS)
• Battery management systems
• PWM motor and LED control
• Industrial automation systems
• Robotics and embedded systems
• Automotive electronics
• High-current power switching circuits

Best For:
Ideal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, industrial automation, robotics, battery-powered devices, embedded systems, motor control systems, SMPS designs, and high-current switching applications requiring efficient and reliable MOSFET performance.

Specifications

Drain-Source Voltage (VDS): 40V
Continuous Drain Current (ID): 80A @ 25°C
Drain-Source On Resistance (RDS(on)): 6.6 mΩ (max) @ VGS = 10V
Gate-Source Voltage (VGS): ±20V
Maximum Power Dissipation (PD): 80W
Thermal Resistance (RθJC): 1.88°C/W

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