IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package (2 Pieces)

IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package (2 Pieces)

Rs. 75.97
Sale price  Rs. 75.97 Regular price 
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IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package (2 Pieces)

IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package (2 Pieces)

Rs. 75.97
Regular price  Sale price  Rs. 75.97
Shipping calculated at checkout.

P-Channel Power MOSFET – 100V High-Current Single-Channel MOSFET
This high-performance single-channel P-Channel Power MOSFET is designed for efficient high-side switching, load control, and power management applications. With a Drain-Source Breakdown Voltage (VDS) of -100V and continuous drain current capability of -23A, this MOSFET is ideal for demanding power electronics, battery-powered systems, industrial automation, and motor control circuits. Its low RDS(on) of 0.117Ω minimizes conduction losses and improves efficiency, while the high power dissipation capability ensures reliable performance under heavy electrical loads.

Why it’s a System Essential:
• High-Voltage P-Channel MOSFET: Supports up to -100V Drain-Source Voltage for advanced power switching applications.
• High Current Capability: Continuous drain current up to -23A for demanding load-driving and control systems.
• Low On-Resistance: RDS(on) of 0.117Ω reduces heat generation and improves energy efficiency.
• Single-Channel Design: Suitable for compact and reliable high-side switching circuits.
• Wide Gate Voltage Support: Gate-Source Voltage rating up to ±20V for stable and flexible gate control.
• High Power Dissipation: Supports up to 140W power dissipation for heavy-duty operation.
• Wide Operating Temperature Range: Reliable operation from -55°C to 175°C in harsh environments.

Technical Capabilities:
• Device Type: P-Channel Power MOSFET
• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (VDS): -100V
• Continuous Drain Current (ID): -23A
• Drain-Source Resistance (RDS(on)): 0.117Ω
• Gate-Source Voltage (VGS): ±20V
• Gate Charge (Qg): 97nC
• Power Dissipation (PD): 140W
• Operating Temperature Range: -55°C to 175°C
• Function: High-side switching, power control, and load management

Features:
• Efficient high-side switching performance
• Low conduction losses
• High-current handling capability
• Excellent thermal reliability
• Rugged construction for industrial applications

Applications:
• High-side power switching
• Battery management systems
• Motor driver circuits
• DC-DC converters and power supplies
• Industrial automation systems
• Robotics and embedded systems
• Automotive electronics
• LED power management
• DIY power electronics projects

Best For:
Ideal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, industrial automation, embedded systems, robotics, automotive systems, motor controllers, battery-powered applications, and high-current switching circuits requiring efficient and reliable P-Channel MOSFET solutions.

Specifications

Number of Channels: 1 Channel
Transistor Polarity: P-channel MOSFET
Drain-Source Breakdown Voltage (VDS): −100V
Continuous Drain Current (ID): −23A
Drain-Source On Resistance (RDS(on)): 0.117 Ω
Gate-Source Voltage (VGS): ±20V
Gate Charge (Qg): 97 nC
Power Dissipation (PD): 140W
Operating Temperature Range: −55°C to +175°C

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