{"title":"Mosfet","description":"","products":[{"product_id":"2n7000-mosfetpack-of-5","title":"2N7000 MOSFET(PACK OF 5)","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eN-Channel MOSFET – TO-92 Package Small Signal Transistor\u003c\/strong\u003e\u003cbr\u003eThis Small Signal N-Channel MOSFET is a reliable semiconductor device designed for fast switching and low-power electronic applications. With a Drain-Source Voltage (VDS) rating of 60V and continuous drain current capability of 200mA, this MOSFET is ideal for signal switching, load control, amplification, and embedded electronics projects. Its fast switching speed of 10ns turn-on and turn-off time makes it suitable for high-speed digital and switching applications. Housed in a compact TO-92 package, it is easy to integrate into breadboards, PCB designs, and DIY electronics projects.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• Reliable N-Channel MOSFET Performance: Suitable for low-power switching and signal control applications.\u003cbr\u003e• High Drain-Source Voltage: Supports up to 60V VDS for versatile circuit compatibility.\u003cbr\u003e• Fast Switching Speed: 10ns turn-on and turn-off times enable efficient high-speed operation.\u003cbr\u003e• Low Power Signal Switching: Continuous drain current up to 200mA with peak pulse current of 500mA.\u003cbr\u003e• Compact TO-92 Package: Easy to mount on PCBs and breadboards for prototyping and circuit development.\u003cbr\u003e• Wide Gate Voltage Support: ±20V Gate-Source Voltage rating for reliable gate control.\u003cbr\u003e• Ideal for Embedded Electronics: Suitable for microcontroller interfacing, automation, and switching circuits.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: Small Signal N-Channel MOSFET\u003cbr\u003e• Package Type: TO-92\u003cbr\u003e• Drain-Source Voltage (VDS): 60V\u003cbr\u003e• Continuous Drain Current (ID): 200mA\u003cbr\u003e• Pulsed Drain Current (ID Peak): 500mA\u003cbr\u003e• Gate Threshold Voltage (VGS-th): 3V\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Turn-On Time: 10ns\u003cbr\u003e• Turn-Off Time: 10ns\u003cbr\u003e• Function: Signal switching, load control, amplification, and circuit interfacing\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Fast switching performance\u003cbr\u003e• Compact and lightweight package\u003cbr\u003e• Reliable low-power operation\u003cbr\u003e• Suitable for high-speed applications\u003cbr\u003e• Easy PCB and breadboard integration\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Signal switching circuits\u003cbr\u003e• Low-power load control\u003cbr\u003e• Arduino and microcontroller projects\u003cbr\u003e• Embedded systems and IoT devices\u003cbr\u003e• Switching regulators\u003cbr\u003e• Automation and robotics\u003cbr\u003e• Consumer electronics\u003cbr\u003e• DIY electronics and prototyping\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on embedded systems, automation projects, IoT devices, switching circuits, robotics, signal-processing applications, and DIY electronics requiring compact and fast-switching MOSFET solutions.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533811142855,"sku":"TE-MSFT01-470","price":57.78,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/2N7000MOSFET_1.png?v=1778647215"},{"product_id":"ao3400-30v-5-8a-n-channel-mosfet-sot-23-pack-of-5","title":"AO3400 30V 5.8A N-Channel MOSFET SOT-23 (Pack of 5)","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eN-Channel MOSFET – Compact Power Switching Semiconductor Device\u003c\/strong\u003e\u003cbr\u003eThis N-Channel MOSFET is a reliable semiconductor device designed for efficient switching and low-voltage power control applications. With a continuous drain current capability ranging from 1.5A to 2.3A, it is suitable for driving loads such as LEDs, motors, relays, and low-power electronic circuits. The MOSFET supports a maximum Gate-Source Voltage of ±8V and a maximum Drain-Source Voltage of 20V, making it ideal for embedded systems, battery-powered devices, and compact switching applications.\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• Efficient N-Channel MOSFET Performance: Designed for reliable electronic switching and load control.\u003cbr\u003e• Moderate Current Handling: Supports continuous drain currents from 1.5A to 2.3A for versatile applications.\u003cbr\u003e• Low-Voltage Operation: Suitable for compact low-voltage circuits and battery-powered electronics.\u003cbr\u003e• Fast Electronic Switching: Ideal for PWM control, signal switching, and microcontroller interfacing.\u003cbr\u003e• Compact Integration: Easily integrated into PCB designs and embedded systems.\u003cbr\u003e• Wide Application Support: Suitable for automation, robotics, and DIY electronics projects.\u003cbr\u003e• Microcontroller Compatible: Works well with Arduino, ESP32, Raspberry Pi, and embedded controllers.\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel MOSFET\u003cbr\u003e• Continuous Drain Current (ID): 1.5A to 2.3A\u003cbr\u003e• Maximum Gate-Source Voltage (VGS): ±8V\u003cbr\u003e• Maximum Drain-Source Voltage (VDS): 20V\u003cbr\u003e• Function: Electronic switching, load control, and signal interfacing\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Reliable switching performance\u003cbr\u003e• Suitable for low-voltage applications\u003cbr\u003e• Compact and efficient design\u003cbr\u003e• Fast response for switching circuits\u003cbr\u003e• Easy PCB integration\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• LED switching and dimming\u003cbr\u003e• Motor control circuits\u003cbr\u003e• Relay driving circuits\u003cbr\u003e• Arduino and microcontroller projects\u003cbr\u003e• Embedded systems and IoT devices\u003cbr\u003e• Battery-powered electronics\u003cbr\u003e• Robotics and automation systems\u003cbr\u003e• DIY electronics and prototyping\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on embedded systems, automation projects, IoT devices, robotics, motor drivers, low-voltage switching circuits, and DIY electronics requiring compact and efficient MOSFET solutions.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533811896519,"sku":"TE-MSFT02-471","price":57.78,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/AO340030V5.8AN-ChannelMOSFETSOT-23_1.png?v=1778647780"},{"product_id":"irf520-mosfet","title":"IRF520 MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003ePower MOSFET – 100V High-Current N-Channel Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-performance N-Channel Power MOSFET is designed for efficient power switching, motor control, load driving, and high-current electronic applications. With a Drain-to-Source Voltage (VDS) rating of 100V and continuous drain current capability of 9.7A at 25°C, this MOSFET is suitable for demanding power electronics and switching circuits. Its low RDS(on) of 0.27Ω ensures reduced conduction losses and improved efficiency, while the moderate gate charge supports reliable high-speed switching performance.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Voltage Handling: Supports up to 100V Drain-to-Source Voltage for power electronics applications.\u003cbr\u003e• High Current Capability: Handles continuous drain current up to 9.7A at 25°C.\u003cbr\u003e• Low On-Resistance: RDS(on) of 0.27Ω reduces heat generation and improves switching efficiency.\u003cbr\u003e• Reliable Gate Threshold Range: Gate threshold voltage between 2.0V and 4.0V enables easy gate driving.\u003cbr\u003e• Efficient Switching Performance: Total gate charge of 47nC supports fast switching operation.\u003cbr\u003e• Suitable for Power Control Applications: Ideal for motor drivers, converters, and load switching circuits.\u003cbr\u003e• Embedded System Compatible: Works with MOSFET driver circuits, PWM controllers, and microcontrollers.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-to-Source Voltage (VDS): 100V\u003cbr\u003e• Continuous Drain Current (ID): 9.7A at 25°C\u003cbr\u003e• Gate Threshold Voltage (VGS(th)): 2.0V – 4.0V\u003cbr\u003e• On-Resistance (RDS(on)): 0.27Ω\u003cbr\u003e• Total Gate Charge (Qg): 47nC\u003cbr\u003e• Function: Power switching, load control, and motor driving\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• High-current handling capability\u003cbr\u003e• Low conduction losses\u003cbr\u003e• Efficient switching operation\u003cbr\u003e• Reliable thermal and electrical performance\u003cbr\u003e• Suitable for high-power applications\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Power supply switching\u003cbr\u003e• Battery management systems\u003cbr\u003e• LED power control\u003cbr\u003e• PWM switching applications\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, automation projects, motor control systems, switching power supplies, robotics, and high-current circuit applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533821497543,"sku":"TE-THMSFT03-472","price":34.24,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"irf530n-power-mosfet","title":"IRF530N Power MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003ePower MOSFET – 100V High-Efficiency N-Channel Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-performance N-Channel Power MOSFET is designed for efficient power switching, motor control, and high-current electronic applications. With a Drain-to-Source Voltage (VDS) rating of 100V and low RDS(on) of 44mΩ at a Gate-Source Voltage of 10V, the MOSFET delivers excellent switching efficiency with reduced conduction losses. Its high power dissipation capability of 130W at 25°C makes it suitable for demanding power electronics, industrial automation, and embedded system applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Voltage Support: Handles up to 100V Drain-to-Source Voltage for versatile power applications.\u003cbr\u003e• Low On-Resistance: RDS(on) of 44mΩ minimizes heat generation and improves efficiency.\u003cbr\u003e• High Power Dissipation: Supports up to 130W power dissipation at 25°C for demanding circuits.\u003cbr\u003e• Wide Gate Voltage Range: Gate-to-Source Voltage rating of ±20V enables reliable gate control.\u003cbr\u003e• Efficient Power Switching: Suitable for high-speed PWM and switching applications.\u003cbr\u003e• Rugged Performance: Ideal for industrial, automotive, and embedded electronics systems.\u003cbr\u003e• Easy Integration: Commonly used with MOSFET drivers, microcontrollers, and power control circuits.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-to-Source Voltage (VDS): 100V\u003cbr\u003e• Gate-to-Source Voltage (VGS): ±20V\u003cbr\u003e• On-Resistance (RDS(on)): 44mΩ at VGS = 10V\u003cbr\u003e• Power Dissipation (PD): 130W at 25°C\u003cbr\u003e• Function: Power switching, load control, and motor driving\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Low conduction losses\u003cbr\u003e• High switching efficiency\u003cbr\u003e• High power handling capability\u003cbr\u003e• Reliable thermal performance\u003cbr\u003e• Suitable for high-current applications\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Battery management systems\u003cbr\u003e• LED power control\u003cbr\u003e• PWM switching applications\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, automation systems, robotics, motor control circuits, SMPS designs, and high-current switching applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533822841031,"sku":"TE-THMSFT04-473","price":37.45,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"irf540n-mosfet","title":"IRF540N MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e100V N-Channel Power MOSFET – High-Current Low RDS(on) Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-performance N-Channel Power MOSFET is engineered for efficient high-current switching, motor control, and power management applications. With a Drain-to-Source Voltage (VDS) rating of 100V and a continuous drain current capability of 33A at VGS = 10V and 25°C, this MOSFET is ideal for demanding power electronics systems. Its ultra-low RDS(on) of 44mΩ minimizes conduction losses and improves overall efficiency, while the high power dissipation capability of 130W ensures reliable operation under heavy loads.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Voltage Capability: Supports up to 100V Drain-to-Source Voltage for versatile power applications.\u003cbr\u003e• High Current Handling: Continuous drain current up to 33A for demanding switching and motor control circuits.\u003cbr\u003e• Low On-Resistance: RDS(on) of 44mΩ at VGS = 10V reduces heat generation and improves efficiency.\u003cbr\u003e• Wide Operating Temperature Range: Reliable operation from -55°C to 175°C in harsh environments.\u003cbr\u003e• High Power Dissipation: Supports up to 130W power dissipation at 25°C.\u003cbr\u003e• Wide Gate Voltage Support: Gate-to-Source Voltage rating of ±20V ensures reliable gate drive operation.\u003cbr\u003e• Efficient Switching Performance: Suitable for PWM, SMPS, and high-speed power switching applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-to-Source Voltage (VDS): 100V\u003cbr\u003e• Gate-to-Source Voltage (VGS): ±20V\u003cbr\u003e• On-Resistance (RDS(on)): 44mΩ at VGS = 10V\u003cbr\u003e• Continuous Drain Current (ID): 33A at VGS = 10V and 25°C\u003cbr\u003e• Power Dissipation (PD): 130W at 25°C\u003cbr\u003e• Operating Junction Temperature Range: -55°C to 175°C\u003cbr\u003e• Function: Power switching, motor driving, and load control\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Low conduction losses\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Excellent thermal performance\u003cbr\u003e• Reliable operation under heavy loads\u003cbr\u003e• Suitable for industrial and power electronics applications\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Battery management systems\u003cbr\u003e• Inverters and UPS systems\u003cbr\u003e• LED power control\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, automation systems, motor controllers, robotics, industrial electronics, switching power supplies, embedded systems, and high-current circuit applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533823922375,"sku":"TE-THMSFT05-474","price":22.47,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"irf9530-mosfet","title":"IRF9530 MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eP-Channel Power MOSFET – 100V High-Current Switching MOSFET\u003c\/strong\u003e\u003cbr\u003eThis single-channel P-Channel Power MOSFET is designed for efficient high-side switching, load control, and power management applications. With a Drain-Source Breakdown Voltage (VDS) of -100V and continuous drain current capability of -14A, this MOSFET is suitable for demanding power electronics, battery-powered systems, and industrial control circuits. Its low RDS(on) of 0.20Ω helps reduce conduction losses and improve efficiency, while the high power dissipation capability ensures reliable operation under heavy electrical loads.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High-Voltage P-Channel MOSFET: Supports up to -100V Drain-Source Voltage for power switching applications.\u003cbr\u003e• High Current Handling: Continuous drain current up to -14A for demanding load control circuits.\u003cbr\u003e• Low On-Resistance: RDS(on) of 0.20Ω minimizes power loss and heat generation.\u003cbr\u003e• Single-Channel Design: Suitable for compact and efficient high-side switching circuits.\u003cbr\u003e• Reliable Gate Drive Support: Gate-Source Voltage rating up to ±20V for stable operation.\u003cbr\u003e• Wide Operating Temperature Range: Operates reliably from -55°C to 175°C in harsh environments.\u003cbr\u003e• High Power Dissipation: Supports up to 79W power dissipation for heavy-duty applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: P-Channel Power MOSFET\u003cbr\u003e• Number of Channels: 1 Channel\u003cbr\u003e• Transistor Polarity: P-Channel\u003cbr\u003e• Drain-Source Breakdown Voltage (VDS): -100V\u003cbr\u003e• Continuous Drain Current (ID): -14A\u003cbr\u003e• Drain-Source Resistance (RDS(on)): 0.20Ω\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Gate Charge (Qg): 58nC\u003cbr\u003e• Power Dissipation (PD): 79W\u003cbr\u003e• Operating Temperature Range: -55°C to 175°C\u003cbr\u003e• Function: High-side switching, load control, and power management\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Efficient high-side switching capability\u003cbr\u003e• Low conduction losses\u003cbr\u003e• High-current performance\u003cbr\u003e• Reliable thermal stability\u003cbr\u003e• Rugged construction for demanding environments\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• High-side power switching\u003cbr\u003e• Battery management systems\u003cbr\u003e• DC motor control circuits\u003cbr\u003e• Power supply and converter circuits\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• LED power management\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, industrial automation, robotics, automotive circuits, motor control systems, and high-current switching applications requiring reliable P-Channel MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533825036487,"sku":"TE-THMSFT06-475","price":26.75,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"irf9540n-mosfet-100v-23a-p-channel-power-mosfet-to-220-package-2-pieces","title":"IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package (2 Pieces)","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eP-Channel Power MOSFET – 100V High-Current Single-Channel MOSFET\u003c\/strong\u003e\u003cbr\u003eThis high-performance single-channel P-Channel Power MOSFET is designed for efficient high-side switching, load control, and power management applications. With a Drain-Source Breakdown Voltage (VDS) of -100V and continuous drain current capability of -23A, this MOSFET is ideal for demanding power electronics, battery-powered systems, industrial automation, and motor control circuits. Its low RDS(on) of 0.117Ω minimizes conduction losses and improves efficiency, while the high power dissipation capability ensures reliable performance under heavy electrical loads.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High-Voltage P-Channel MOSFET: Supports up to -100V Drain-Source Voltage for advanced power switching applications.\u003cbr\u003e• High Current Capability: Continuous drain current up to -23A for demanding load-driving and control systems.\u003cbr\u003e• Low On-Resistance: RDS(on) of 0.117Ω reduces heat generation and improves energy efficiency.\u003cbr\u003e• Single-Channel Design: Suitable for compact and reliable high-side switching circuits.\u003cbr\u003e• Wide Gate Voltage Support: Gate-Source Voltage rating up to ±20V for stable and flexible gate control.\u003cbr\u003e• High Power Dissipation: Supports up to 140W power dissipation for heavy-duty operation.\u003cbr\u003e• Wide Operating Temperature Range: Reliable operation from -55°C to 175°C in harsh environments.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: P-Channel Power MOSFET\u003cbr\u003e• Number of Channels: 1 Channel\u003cbr\u003e• Transistor Polarity: P-Channel\u003cbr\u003e• Drain-Source Breakdown Voltage (VDS): -100V\u003cbr\u003e• Continuous Drain Current (ID): -23A\u003cbr\u003e• Drain-Source Resistance (RDS(on)): 0.117Ω\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Gate Charge (Qg): 97nC\u003cbr\u003e• Power Dissipation (PD): 140W\u003cbr\u003e• Operating Temperature Range: -55°C to 175°C\u003cbr\u003e• Function: High-side switching, power control, and load management\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Efficient high-side switching performance\u003cbr\u003e• Low conduction losses\u003cbr\u003e• High-current handling capability\u003cbr\u003e• Excellent thermal reliability\u003cbr\u003e• Rugged construction for industrial applications\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• High-side power switching\u003cbr\u003e• Battery management systems\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters and power supplies\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• LED power management\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, industrial automation, embedded systems, robotics, automotive systems, motor controllers, battery-powered applications, and high-current switching circuits requiring efficient and reliable P-Channel MOSFET solutions.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533832376519,"sku":"TE-MSFT03-476","price":75.97,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"irfp460n-power-mosfet","title":"IRFP460N Power MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eAdvanced Power MOSFET – Rugged High-Efficiency Switching Device\u003c\/strong\u003e\u003cbr\u003eThis advanced Power MOSFET is engineered for high-efficiency switching applications requiring reliable performance, low gate drive power, and strong ruggedness characteristics. Featuring low gate charge (Qg), the MOSFET offers simplified gate drive requirements and efficient switching operation, making it suitable for embedded systems, motor drivers, power supplies, and industrial electronics. With improved avalanche capability and dynamic dv\/dt ruggedness, it delivers enhanced reliability in demanding electrical environments.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• Low Gate Charge (Qg): Reduces gate drive power requirements and simplifies MOSFET driver circuit design.\u003cbr\u003e• Improved Dynamic dv\/dt Ruggedness: Enhances switching reliability in fast-changing electrical conditions.\u003cbr\u003e• Strong Avalanche Capability: Provides protection and durability during transient and inductive switching events.\u003cbr\u003e• Fully Characterized Capacitance Parameters: Enables predictable switching performance and easier circuit optimization.\u003cbr\u003e• Effective COSS Specification: Improves high-frequency switching efficiency and power management performance.\u003cbr\u003e• Reliable High-Speed Switching: Suitable for PWM, SMPS, and motor control applications.\u003cbr\u003e• Robust Electrical Performance: Ideal for demanding industrial and power electronics systems.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Highlights:\u003c\/strong\u003e\u003cbr\u003e• Low Gate Charge (Qg) for efficient switching\u003cbr\u003e• Improved avalanche ruggedness\u003cbr\u003e• Enhanced dynamic dv\/dt capability\u003cbr\u003e• Fully characterized capacitance parameters\u003cbr\u003e• Effective output capacitance (COSS) specification\u003cbr\u003e• Designed for high-efficiency power switching applications\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Reduced gate drive complexity\u003cbr\u003e• Improved switching efficiency\u003cbr\u003e• Enhanced transient protection\u003cbr\u003e• Reliable high-frequency performance\u003cbr\u003e• Suitable for demanding power electronics environments\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• PWM switching applications\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Battery management systems\u003cbr\u003e• Inverters and UPS systems\u003cbr\u003e• Robotics and embedded electronics\u003cbr\u003e• High-frequency power switching circuits\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for engineers, electronics professionals, makers, and advanced hobbyists working on power electronics, motor control systems, industrial automation, embedded systems, switching regulators, SMPS designs, and high-frequency power management applications requiring efficient and rugged MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533842436295,"sku":"TE-MSFT08-477","price":105.93,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRFP460NPowerMOSFET_1.png?v=1778651024"},{"product_id":"irfz24n-mosfet","title":"IRFZ24N MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eN-Channel Power MOSFET – 55V TO-220AB High-Speed Switching Device\u003c\/strong\u003e\u003cbr\u003eThis N-Channel Power MOSFET is a high-performance switching transistor designed for efficient power control, motor driving, and load management applications. With a Drain-to-Source Breakdown Voltage of 55V and continuous drain current capability of 17A, this MOSFET is suitable for medium-power switching circuits, DC motor control, battery systems, and embedded electronics. Its low total gate charge of 13.3nC enables efficient high-speed switching with reduced gate drive requirements, while the TO-220AB package ensures effective heat dissipation and easy mounting.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• Efficient N-Channel MOSFET Design: Ideal for power switching and load control applications.\u003cbr\u003e• 55V Drain-Source Voltage Rating: Suitable for medium-voltage electronic systems and power circuits.\u003cbr\u003e• High Current Handling: Supports continuous drain current up to 17A.\u003cbr\u003e• Low Gate Charge: Total gate charge of 13.3nC improves switching efficiency and reduces drive complexity.\u003cbr\u003e• Reliable Thermal Performance: Power dissipation capability up to 45W.\u003cbr\u003e• Wide Gate Voltage Support: Gate-Source Voltage rating of ±20V ensures stable gate control.\u003cbr\u003e• TO-220AB Package: Provides effective heat management and easy PCB\/heatsink integration.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Package Type: TO-220AB\u003cbr\u003e• Drain-to-Source Breakdown Voltage (VDS): 55V\u003cbr\u003e• Gate-to-Source Voltage (VGS max): ±20V\u003cbr\u003e• Drain-Source On-State Resistance (RDS(on) max): 70mΩ\u003cbr\u003e• Continuous Drain Current (ID): 17A\u003cbr\u003e• Total Gate Charge (Qg): 13.3nC\u003cbr\u003e• Power Dissipation (PD): 45W\u003cbr\u003e• Function: Power switching, load control, and motor driving\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Fast switching performance\u003cbr\u003e• Low gate drive requirement\u003cbr\u003e• Reliable thermal handling\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Rugged TO-220AB package\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• DC motor driver circuits\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Battery management systems\u003cbr\u003e• LED power control\u003cbr\u003e• PWM switching applications\u003cbr\u003e• Robotics and automation systems\u003cbr\u003e• Industrial electronics\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, automation projects, robotics, motor controllers, SMPS circuits, and medium-power switching applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533860524231,"sku":"TE-MSFT09-478","price":37.45,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"irlr3636trpbf-60v-50a-6-8mω-10v-50a-143w-2-5v-1-n-channel-to-252-2dpak-mosfets","title":"IRLR3636TRPBF 60V 50A 6.8mΩ@10V,50A 143W 2.5V 1 N-Channel TO-252-2(DPAK) MOSFETs","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eInfineon IRLR3636TRPBF – 60V N-Channel HEXFET® Power MOSFET\u003c\/strong\u003e\u003cbr\u003eThe IRLR3636TRPBF from Infineon Technologies\u003cbr\u003eis a high-performance N-Channel HEXFET® Power MOSFET designed for efficient high-current switching, power management, and low-loss applications. Built using advanced HEXFET® MOSFET technology, this device delivers ultra-low on-resistance, high current capability, and excellent thermal performance in a compact TO-252-3 (DPAK) surface-mount package. It is ideal for motor control, DC-DC converters, battery management systems, industrial automation, and embedded power electronics.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• Advanced HEXFET® MOSFET Technology: Delivers high efficiency and low conduction losses.\u003cbr\u003e• Ultra-Low RDS(on): Typical on-resistance as low as 5.4mΩ for reduced heat generation and improved efficiency.\u003cbr\u003e• High Current Capability: Supports 50A continuous drain current and pulsed current up to 99A.\u003cbr\u003e• Logic-Level Gate Drive: Low gate threshold voltage enables compatibility with modern MOSFET drivers and embedded systems.\u003cbr\u003e• Compact DPAK Package: Surface-mount TO-252-3 package supports compact PCB designs and efficient thermal dissipation.\u003cbr\u003e• High Thermal Reliability: Operates across a wide temperature range from -55°C to +175°C.\u003cbr\u003e• Industrial-Grade Performance: Suitable for high-current switching and power conversion applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Manufacturer: Infineon Technologies\u003cbr\u003e• Part Number: IRLR3636TRPBF\u003cbr\u003e• Device Type: Power MOSFET\u003cbr\u003e• FET Type \/ Polarity: N-Channel\u003cbr\u003e• Technology: HEXFET® MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): 60V\u003cbr\u003e• Continuous Drain Current (ID): 50A at 25°C\u003cbr\u003e• Pulsed Drain Current (IDM): Up to 99A\u003cbr\u003e• On-Resistance (RDS(on)):\u003cbr\u003e • 6.8mΩ @ VGS = 10V, ID = 50A\u003cbr\u003e • Typical: ~5.4mΩ\u003cbr\u003e• Gate Threshold Voltage (VGS(th)): Max 2.5V\u003cbr\u003e• Maximum Gate-Source Voltage (VGS): ±16V\u003cbr\u003e• Total Gate Charge (Qg): ~49nC\u003cbr\u003e• Input Capacitance (Ciss): ~3779pF\u003cbr\u003e• Power Dissipation (PD): 143W\u003cbr\u003e• Operating Temperature Range: −55°C to +175°C\u003cbr\u003e• Package \/ Case: TO-252-3 (DPAK)\u003cbr\u003e• Mounting Type: Surface Mount (SMD)\u003cbr\u003e• Number of Pins: 3\u003cbr\u003e• Moisture Sensitivity Level: MSL 1 (Unlimited)\u003cbr\u003e• Compliance: RoHS Compliant\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Ultra-low conduction losses\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Compact surface-mount package\u003cbr\u003e• Excellent thermal and electrical performance\u003cbr\u003e• Logic-level gate compatibility\u003cbr\u003e• Industrial-grade reliability\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• Battery management systems (BMS)\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• PWM power control\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• High-current load switching\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for engineers, PCB designers, embedded developers, makers, and electronics professionals working on power electronics, motor control systems, industrial automation, battery-powered devices, robotics, automotive systems, and high-efficiency switching applications requiring compact, low-loss, and high-current MOSFET solutions.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533885722823,"sku":"TE-MSFT10-479","price":75.97,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRLR3636TRPBF60V50A_1.png?v=1778651712"},{"product_id":"nce4080k-40v-80a-n-channel-enhancement-mode-power-mosfet-pack-of-5","title":"NCE4080K 40V 80A N-Channel Enhancement Mode Power Mosfet (Pack of 5)","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e40V N-Channel Power MOSFET – High-Current Low RDS(on) Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-performance N-Channel Power MOSFET is designed for efficient high-current switching, motor control, and power management applications. With a Drain-Source Voltage (VDS) rating of 40V and an impressive continuous drain current capability of 80A at 25°C, this MOSFET is ideal for demanding power electronics systems. Its ultra-low RDS(on) of 6.6mΩ at VGS = 10V minimizes conduction losses and improves overall efficiency, while fast switching performance and low gate charge make it suitable for high-frequency switching applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Current Capability: Supports up to 80A continuous drain current for demanding load-driving applications.\u003cbr\u003e• Ultra-Low On-Resistance: RDS(on) of 6.6mΩ reduces heat generation and power losses.\u003cbr\u003e• Fast Switching Performance: Low gate charge enables efficient high-speed switching operation.\u003cbr\u003e• Reliable Voltage Support: Handles up to 40V Drain-Source Voltage for low- to medium-voltage power systems.\u003cbr\u003e• Wide Gate Voltage Range: Gate-Source Voltage rating of ±20V supports stable gate drive operation.\u003cbr\u003e• Excellent Thermal Performance: Low thermal resistance of 1.88°C\/W improves heat dissipation efficiency.\u003cbr\u003e• High Power Dissipation: Supports up to 80W power dissipation for robust operation.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): 40V\u003cbr\u003e• Continuous Drain Current (ID): 80A at 25°C\u003cbr\u003e• On-Resistance (RDS(on) Max): 6.6mΩ @ VGS = 10V\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Maximum Power Dissipation (PD): 80W\u003cbr\u003e• Thermal Resistance (RθJC): 1.88°C\/W\u003cbr\u003e• Function: Power switching, motor driving, and load control\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Ultra-low conduction losses\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Fast switching response\u003cbr\u003e• Low gate charge for efficient drive operation\u003cbr\u003e• Excellent thermal reliability\u003cbr\u003e• Suitable for high-efficiency power systems\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Battery management systems\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• PWM motor and LED control\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• High-current power switching circuits\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, embedded systems, industrial automation, robotics, battery-powered devices, motor controllers, SMPS designs, and high-current switching applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533901975751,"sku":"TE-MSFT11-480","price":107.0,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRLR3636TRPBF60V50A_1.png?v=1778651712"},{"product_id":"ncep028n85d-85v-200a-n-channel-enhancement-mode-power-mosfet","title":"NCEP028N85D 85V 200A N-Channel Enhancement Mode Power Mosfet","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e40V N-Channel Power MOSFET – Ultra-Low RDS(on) High-Current Switching MOSFET\u003c\/strong\u003e\u003cbr\u003eThis high-efficiency N-Channel Power MOSFET is engineered for demanding power switching, motor control, and load-driving applications. With a Drain-Source Voltage (VDS) rating of 40V and a continuous drain current capability of 80A at 25°C, this MOSFET delivers outstanding performance for high-current electronic systems. Its ultra-low RDS(on) of 6.6mΩ at VGS = 10V minimizes conduction losses and improves efficiency, while fast switching performance with low gate charge enables reliable operation in high-frequency power applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Current Capability: Supports continuous drain current up to 80A for heavy-load applications.\u003cbr\u003e• Ultra-Low On-Resistance: RDS(on) of 6.6mΩ reduces power losses and heat generation.\u003cbr\u003e• Fast Switching Operation: Low gate charge enables efficient high-speed switching performance.\u003cbr\u003e• Reliable Voltage Support: Handles up to 40V Drain-Source Voltage for low- and medium-voltage systems.\u003cbr\u003e• Wide Gate Voltage Range: Gate-Source Voltage rating of ±20V supports stable and flexible gate drive control.\u003cbr\u003e• Excellent Thermal Performance: Thermal resistance of 1.88°C\/W improves heat dissipation and reliability.\u003cbr\u003e• High Power Dissipation: Supports up to 80W power dissipation for demanding power electronics applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): 40V\u003cbr\u003e• Continuous Drain Current (ID): 80A at 25°C\u003cbr\u003e• On-Resistance (RDS(on) Max): 6.6mΩ @ VGS = 10V\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Maximum Power Dissipation (PD): 80W\u003cbr\u003e• Thermal Resistance (RθJC): 1.88°C\/W\u003cbr\u003e• Function: Power switching, load control, and motor driving\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Ultra-low conduction losses\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Fast switching response\u003cbr\u003e• Low gate drive requirements\u003cbr\u003e• Excellent thermal reliability\u003cbr\u003e• Suitable for high-efficiency power systems\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Battery management systems\u003cbr\u003e• PWM motor and LED control\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• High-current power switching circuits\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, industrial automation, robotics, battery-powered devices, embedded systems, motor control systems, SMPS designs, and high-current switching applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533917769927,"sku":"TE-MSFT12-481","price":159.43,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/NCEP028N85D85V200AN-ChannelEnhancementModePowerMosfet_1.png?v=1778652558"},{"product_id":"p80nf70-mosfet-ic","title":"P80NF70 MOSFET IC","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e68V N-Channel Power MOSFET – High-Current Power Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-performance N-Channel Power MOSFET is designed for efficient high-current switching, load control, and power management applications. With a Drain-Source Voltage rating of 68V and high continuous drain current capability, this MOSFET is suitable for demanding power electronics systems including motor drivers, DC-DC converters, battery management systems, and industrial automation circuits. Its robust electrical and thermal characteristics ensure reliable operation in high-power environments.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Voltage Capability: Supports up to 68V Drain-Source Voltage for versatile power switching applications.\u003cbr\u003e• High Current Handling: Designed for heavy-load and high-current electronic systems.\u003cbr\u003e• Reliable Gate Drive Support: Gate-Source Voltage rating up to +20V enables stable switching control.\u003cbr\u003e• Strong Thermal Performance: Derating factor of 1.27W\/°C supports reliable heat management.\u003cbr\u003e• Efficient Power Switching: Suitable for PWM, motor control, and high-frequency switching circuits.\u003cbr\u003e• Rugged Design: Ideal for industrial, automotive, and embedded power electronics applications.\u003cbr\u003e• Versatile Integration: Compatible with MOSFET drivers, microcontrollers, and power control systems.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): 68V\u003cbr\u003e• Gate-Source Voltage (VGS): +20V\u003cbr\u003e• Continuous Drain Current (ID): 98A\u003cbr\u003e• Derating Factor: 1.27W\/°C\u003cbr\u003e• Function: Power switching, motor driving, and load control\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• High-current switching capability\u003cbr\u003e• Reliable thermal handling\u003cbr\u003e• Efficient switching performance\u003cbr\u003e• Rugged power device construction\u003cbr\u003e• Suitable for demanding power applications\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Battery management systems\u003cbr\u003e• PWM switching applications\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• High-current load switching\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, industrial automation, embedded systems, robotics, automotive systems, motor controllers, switching power supplies, and high-current electronic applications requiring efficient and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533928747207,"sku":"TE-MSFT13-482","price":26.75,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/P80NF70MOSFETIC_3.png?v=1778652987"},{"product_id":"stp110n8f6-n-channel-80v-110a-power-mosfet-to-220-package","title":"STP110N8F6 N-Channel 80V 110A Power Mosfet – TO-220 Package","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e80V N-Channel Power MOSFET – High-Current Industrial Switching MOSFET\u003c\/strong\u003e\u003cbr\u003eThis high-performance N-Channel Power MOSFET is designed for demanding high-current switching, motor control, and power management applications. With a Drain-Source Voltage rating of 80V and an impressive continuous drain current capability of 110A at 25°C, this MOSFET is suitable for industrial automation, battery systems, inverters, motor drivers, and high-power switching circuits. Its robust thermal performance, high pulsed current capability, and avalanche energy tolerance ensure reliable operation in heavy-duty electronic environments.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Voltage Support: Handles up to 80V Drain-Source Voltage for versatile power electronics applications.\u003cbr\u003e• Extremely High Current Capability: Supports continuous drain current up to 110A at 25°C and 85A at 100°C.\u003cbr\u003e• High Pulsed Current Capacity: Pulsed drain current up to 440A for transient and peak load handling.\u003cbr\u003e• Excellent Thermal Performance: Supports up to 200W total power dissipation at TC = 25°C.\u003cbr\u003e• Rugged Avalanche Capability: Single pulse avalanche energy rating of 180mJ improves reliability during inductive switching events.\u003cbr\u003e• Wide Operating Temperature Range: Operates reliably from -55°C to 175°C in harsh conditions.\u003cbr\u003e• Industrial-Grade Switching Performance: Suitable for demanding power conversion and load control systems.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): 80V\u003cbr\u003e• Gate-Source Voltage (VGS): ±20V\u003cbr\u003e• Continuous Drain Current (ID):\u003cbr\u003e • 110A at TC = 25°C\u003cbr\u003e • 85A at TC = 100°C\u003cbr\u003e• Pulsed Drain Current (IDM): 440A\u003cbr\u003e• Total Power Dissipation (PD): 200W at TC = 25°C\u003cbr\u003e• Single Pulse Avalanche Energy: 180mJ\u003cbr\u003e • Conditions: TJ = 25°C, ID = 55A, VDD = 60V\u003cbr\u003e• Operating Junction Temperature: -55°C to 175°C\u003cbr\u003e• Storage Temperature: -55°C to 175°C\u003cbr\u003e• Function: High-current switching, power management, and motor control\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• High-current handling capability\u003cbr\u003e• Excellent thermal reliability\u003cbr\u003e• Strong avalanche ruggedness\u003cbr\u003e• Efficient power switching performance\u003cbr\u003e• Suitable for industrial and automotive environments\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• Inverters and UPS systems\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Battery management systems\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive power electronics\u003cbr\u003e• High-current load switching\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for engineers, electronics professionals, industrial designers, makers, and advanced hobbyists working on power electronics, automation systems, robotics, electric vehicle systems, motor controllers, battery-powered devices, industrial switching applications, and high-current circuit designs requiring rugged and reliable MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46533951258823,"sku":"TE-MSFT14-483","price":117.7,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/P80NF70MOSFETIC_1_c4496684-a605-4e45-a92d-78e60cd2df5f.png?v=1778653065"},{"product_id":"tk22e10n1-n-channel-silicon-mosfet","title":"TK22E10N1 N-Channel Silicon MOSFET","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003eEnhancement Mode Power MOSFET – Low RDS(on) High-Efficiency Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-performance enhancement-mode Power MOSFET is designed for efficient switching, load control, and power management applications. Featuring an ultra-low drain-source on-resistance of 11.5mΩ (typical) at VGS = 10V, the MOSFET delivers reduced conduction losses and improved system efficiency. Its low leakage current and reliable threshold voltage characteristics make it suitable for embedded systems, industrial electronics, motor control circuits, and high-efficiency power applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• Ultra-Low On-Resistance: RDS(on) of 11.5mΩ minimizes heat generation and improves power efficiency.\u003cbr\u003e• Low Leakage Current: IDSS of only 10μA (max) ensures reduced standby power loss.\u003cbr\u003e• Enhancement Mode Operation: Gate threshold voltage range of 2.0V to 4.0V enables reliable switching control.\u003cbr\u003e• Efficient High-Speed Switching: Suitable for PWM, SMPS, and motor control applications.\u003cbr\u003e• Reliable Electrical Performance: Designed for stable operation in demanding electronic systems.\u003cbr\u003e• Suitable for Embedded Power Systems: Ideal for automation, robotics, and battery-powered applications.\u003cbr\u003e• Easy Integration: Compatible with MOSFET drivers, microcontrollers, and power control circuits.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: Enhancement Mode Power MOSFET\u003cbr\u003e• Drain-Source On-Resistance (RDS(on)): 11.5mΩ (typ.) @ VGS = 10V\u003cbr\u003e• Leakage Current (IDSS): 10μA (max) @ VDS = 100V\u003cbr\u003e• Gate Threshold Voltage (Vth): 2.0V to 4.0V\u003cbr\u003e • Test Conditions: VDS = 10V, ID = 0.3mA\u003cbr\u003e• Function: Power switching, load control, and motor driving\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• Low conduction losses\u003cbr\u003e• Low standby leakage current\u003cbr\u003e• Efficient switching performance\u003cbr\u003e• Reliable enhancement-mode operation\u003cbr\u003e• Suitable for high-efficiency power electronics\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• Motor driver circuits\u003cbr\u003e• DC-DC converters\u003cbr\u003e• Battery management systems\u003cbr\u003e• PWM switching applications\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Robotics and embedded systems\u003cbr\u003e• Automotive electronics\u003cbr\u003e• DIY power electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for students, hobbyists, makers, engineers, and electronics professionals working on power electronics, automation systems, robotics, embedded systems, motor controllers, battery-powered devices, and high-efficiency switching applications requiring reliable low-loss MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46534024036551,"sku":"TE-MSFT15-484","price":82.39,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/IRF520MOSFET_1.png?v=1778649398"},{"product_id":"toshiba-k2837-mosfet","title":"TOSHIBA K2837 Mosfet","description":"\u003cp\u003e\u003cspan data-sheets-root=\"1\"\u003e\u003cstrong\u003e500V N-Channel Power MOSFET – High-Voltage Switching Device\u003c\/strong\u003e\u003cbr\u003eThis high-voltage N-Channel Power MOSFET is designed for efficient switching and power management in demanding electronic applications. With a Drain-Source Voltage (VDS) capability of approximately 500V and continuous drain current support around 15A, this MOSFET is ideal for high-voltage switching power supplies, inverters, motor control systems, and industrial automation circuits. Its moderate gate charge and rugged electrical characteristics make it suitable for reliable high-frequency switching applications.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eWhy it’s a System Essential:\u003c\/strong\u003e\u003cbr\u003e• High Voltage Capability: Supports approximately 500V Drain-Source Voltage for high-voltage power systems.\u003cbr\u003e• Reliable Current Handling: Continuous drain current capability around 15A for medium- to high-power applications.\u003cbr\u003e• Efficient Switching Performance: Moderate total gate charge of approximately 20nC supports fast switching operation.\u003cbr\u003e• Wide Gate Voltage Range: Gate-Source Voltage rating around ±30V ensures stable gate drive compatibility.\u003cbr\u003e• Suitable for High-Voltage Applications: Ideal for SMPS, inverters, and industrial power electronics.\u003cbr\u003e• Reliable Thermal Performance: Power dissipation capability around 20W supports dependable operation.\u003cbr\u003e• Rugged Power Device Design: Suitable for demanding industrial and embedded electronics environments.\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eTechnical Capabilities:\u003c\/strong\u003e\u003cbr\u003e• Device Type: N-Channel Power MOSFET\u003cbr\u003e• Drain-Source Voltage (VDS): ~500V\u003cbr\u003e• Continuous Drain Current (ID): ~15A\u003cbr\u003e• Total Gate Charge (Qg): ~20nC\u003cbr\u003e• Gate-Source Voltage (VGS): ±30V\u003cbr\u003e• Drain-Source On-Resistance (RDS(on)): ~3Ω\u003cbr\u003e• Power Dissipation (PD): ~20W\u003cbr\u003e• Function: High-voltage switching, load control, and power management\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eFeatures:\u003c\/strong\u003e\u003cbr\u003e• High-voltage switching capability\u003cbr\u003e• Reliable high-frequency operation\u003cbr\u003e• Moderate gate drive requirements\u003cbr\u003e• Rugged electrical performance\u003cbr\u003e• Suitable for industrial power electronics\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eApplications:\u003c\/strong\u003e\u003cbr\u003e• Switching power supplies (SMPS)\u003cbr\u003e• High-voltage DC-DC converters\u003cbr\u003e• Inverters and UPS systems\u003cbr\u003e• Motor control circuits\u003cbr\u003e• Industrial automation systems\u003cbr\u003e• Power distribution systems\u003cbr\u003e• Embedded power electronics\u003cbr\u003e• DIY high-voltage electronics projects\u003cbr\u003e\u003cbr\u003e\u003cstrong\u003eBest For:\u003c\/strong\u003e\u003cbr\u003eIdeal for engineers, electronics professionals, makers, and advanced hobbyists working on power electronics, industrial automation, motor control systems, inverters, high-voltage switching circuits, SMPS designs, and embedded power applications requiring reliable high-voltage MOSFET performance.\u003c\/span\u003e\u003c\/p\u003e","brand":"TinkEdge","offers":[{"title":"Default Title","offer_id":46534053068999,"sku":"TE-MSFT16-485","price":105.93,"currency_code":"INR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/files\/TOSHIBAK2837Mosfet_1.png?v=1778654640"}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0774\/6620\/6407\/collections\/TOSHIBAK2837Mosfet_3.png?v=1778757518","url":"https:\/\/shop.tinkedge.tech\/collections\/mosfet.oembed","provider":"TinkEdge","version":"1.0","type":"link"}